ISSN 1070-4272, Russian Journal of Applied Chemistry, 2014, Vol. 87, No. 9, pp. 1246−1250. © Pleiades Publishing, Ltd., 2014.
Original Russian Text © R.A. Kornev, V.A. Shaposhnikov, A.M. Kuz’min, 2014, published in Zhurnal Prikladnoi Khimii, 2014, Vol. 87, No. 9, pp. 1250−1254.
INORGANIC SYNTHESIS AND INDUSTRIAL
Gas-Dynamic and Thermal Processes in the Synthesis
of Trichlorosilane by Hydrogen Reduction
of Silicon Tetrachloride in a High-Frequency Discharge
R. A. Kornev
, V. A. Shaposhnikov
, and A. M. Kuz’min
Devyatykh Institute of Chemistry of High-Purity Substances Russian Academy of Sciences,
ul. Troponina 49, Nizhni Novgorod, 603950 Russia
Lobachebsky State University, pr. Gagarina 23, Nizhni Novgorod, 603950 Russia
Received September 23, 2014
Abstract—The results of numerical simulation of gas-dynamic processes in heat exchange during a plasma
chemical synthesis of trichlorosilane under high frequency discharge were reported. Modeling was performed
for optimal conditions of trichlorosilane synthesis with use of contemporary computational methods of hydro-
dynamics that allowed more exact deﬁ nition of the velocity and temperature ﬁ elds, gas ﬂ ow in a plasma area,
and also determination of temperature ranges of reaction zones and proportion in the gas mixture entering the
Silicon tetrachloride is a major byproduct in synthesis
of silicon by the hydrogen reduction of trichlorosilane
and silane in the trihlorosilane disproportionation. For
creation of a non-waste production of high-purity silicon
development of efﬁ cient methods of conversion of silicon
tetrachloride into trichlorosilane is of a considerable
interest. Plasma methods are promising for these purpose
In the development of the plasma methods diagnostics
of chemically active plasma attracts great attention that
allows determining the temperature of the gas, classifying
the intermediate particles, and understanding mechanism
of chemical reactions .
In some cases, when the plasma zone is small or
inaccessible for physical methods of diagnosis data on
temperature and main mechanisms of chemical reactions
can be obtained by examining gas-dynamic and heat
exchange processes features of the process [6, 7].
One way to study the gas-dynamic and heat exchange
processes is their numerical simulation [8, 9].
Studies of the plasma chemical recovery of silicon
tetrachloride were carried out in a quartz reactor .
A preliminarily processed steam-gas mixture of silicon
tetrachloride and hydrogen was fed in the reactor.
The frequency of HF oscillations was 40.68 MHz,
power W supplied the plasma discharge zone was
determined calorimetrically and was 115 ± 10 W.
The dependence of a conversion of SiCl
ratio of reactants was examined at a constant energy
input 300 kJ mol
and atmospheric pressure (Fig. 1).
The mole ratio of [H
] was changed in a range
2.7–11.2. In the course of the experiment at the ends of
the electrodes the formation of silicon was observed in
the form of melt drops.
Trichlorosilane and also a small
amount of dichlorosilane were found in gas phase reaction
products. Contents of trichloro- and dichlorosilane was
determined by gas chromatography with a detection limit
of 1%. Output of silicon was determined by gravimetric
method with an accuracy of 1 × 10