It is shown that the introduction of chromium(VI) oxide into a gaseous oxidative atmosphere leads to a complex activation mechanism of GaAs oxidation. This mechanism involves processes taking place largely in the activator itself. The kinetics of oxidation in dry and wet media, as well as the catalytic action of various chemistimulator phases, were studied. It was found that good insulating layers can be obtained when thermal oxidation proceeds in the presence of the chromium oxides.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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