Fundamental physicochemical regularities of the chemical vapor deposition of nickel oxide layers

Fundamental physicochemical regularities of the chemical vapor deposition of nickel oxide layers Physicochemical regularities of the chemical vapor deposition (CVD) of nickel oxide layers in the (EtCp)2Ni–O3–O2–Ar reaction system at a reduced pressure were studied. Dependences of growth rate of NiO layers on deposition temperature, linear gas flow velocity, and roughness were derived. A mass-spectrometric study of the composition of the reaction gas phases formed in these systems provided evidence about the fundamental physicochemical regularities of the CVD process, which is important for solving applied problems associated with the development of technological equipment and industrial technology for deposition of NiO layers. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Journal of Applied Chemistry Springer Journals

Fundamental physicochemical regularities of the chemical vapor deposition of nickel oxide layers

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Publisher
Pleiades Publishing
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Chemistry; Chemistry/Food Science, general; Industrial Chemistry/Chemical Engineering
ISSN
1070-4272
eISSN
1608-3296
D.O.I.
10.1134/S1070427216090032
Publisher site
See Article on Publisher Site

Abstract

Physicochemical regularities of the chemical vapor deposition (CVD) of nickel oxide layers in the (EtCp)2Ni–O3–O2–Ar reaction system at a reduced pressure were studied. Dependences of growth rate of NiO layers on deposition temperature, linear gas flow velocity, and roughness were derived. A mass-spectrometric study of the composition of the reaction gas phases formed in these systems provided evidence about the fundamental physicochemical regularities of the CVD process, which is important for solving applied problems associated with the development of technological equipment and industrial technology for deposition of NiO layers.

Journal

Russian Journal of Applied ChemistrySpringer Journals

Published: Jan 3, 2017

References

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