Frequency- and doping-level influence on electric and dielectric properties of PolySi/SiO2/cSi (MOS) structures

Frequency- and doping-level influence on electric and dielectric properties of PolySi/SiO2/cSi... The electric and dielectric characteristics of PolySi/SiO2/cSi (MOS) structure, such as series resistance (R s), dielectric constants (ɛ′) and (ɛ″), dielectric losses (tan δ), and the ac electric conductivity (σ ac), were studied in the frequency range 100 kHz–1 MHz for various doping levels and two thicknesses for the polysilicon layer (100 and 175 nm). The experimental results show that the C and G/ω characteristics are very sensitive to the frequency due to the presence of interface states. Series resistance R s is deduced from C and G/ω measurements and is plotted as a function of the frequency for various doping levels. It is found to decrease with frequency and doping level. To determine $$~{\varepsilon ^\prime }$$ ε ′ , ε″, tan δ, and $${\sigma _{{\text{ac}}}}$$ σ ac , the admittance technique was used. An interesting behavior of the constants, $$~{\varepsilon ^\prime }$$ ε ′ and ε″, was noticed. The $$~{\varepsilon ^\prime }$$ ε ′ values fit led to relations between $$~{\varepsilon ^\prime }$$ ε ′ and the frequency, on one hand, and between $$~{\varepsilon ^\prime }$$ ε ′ and the electric conductivity of the polysilicon layers on the other. These relations make it possible to interpolate directly between two experimental points for a given frequency. The analysis of the results shows that the values of $$~{\varepsilon ^\prime }$$ ε ′ , ε″, and tan δ decrease with increasing frequency. This is due to the fact that in the region of low frequencies, interfacial polarization occurs easily, and the interface states between Si and SiO2 contribute to the improvement of the dielectric properties of the PolySi/SiO2/cSi structures. The study also emphasizes that the ac electric conductivity increases with the increase in frequency and doping level; this causes to the reduction in series resistance. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Physics A: Materials Science Processing Springer Journals

Frequency- and doping-level influence on electric and dielectric properties of PolySi/SiO2/cSi (MOS) structures

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Publisher
Springer Berlin Heidelberg
Copyright
Copyright © 2018 by Springer-Verlag GmbH Germany, part of Springer Nature
Subject
Physics; Condensed Matter Physics; Optical and Electronic Materials; Nanotechnology; Characterization and Evaluation of Materials; Surfaces and Interfaces, Thin Films; Operating Procedures, Materials Treatment
ISSN
0947-8396
eISSN
1432-0630
D.O.I.
10.1007/s00339-018-1684-4
Publisher site
See Article on Publisher Site

Abstract

The electric and dielectric characteristics of PolySi/SiO2/cSi (MOS) structure, such as series resistance (R s), dielectric constants (ɛ′) and (ɛ″), dielectric losses (tan δ), and the ac electric conductivity (σ ac), were studied in the frequency range 100 kHz–1 MHz for various doping levels and two thicknesses for the polysilicon layer (100 and 175 nm). The experimental results show that the C and G/ω characteristics are very sensitive to the frequency due to the presence of interface states. Series resistance R s is deduced from C and G/ω measurements and is plotted as a function of the frequency for various doping levels. It is found to decrease with frequency and doping level. To determine $$~{\varepsilon ^\prime }$$ ε ′ , ε″, tan δ, and $${\sigma _{{\text{ac}}}}$$ σ ac , the admittance technique was used. An interesting behavior of the constants, $$~{\varepsilon ^\prime }$$ ε ′ and ε″, was noticed. The $$~{\varepsilon ^\prime }$$ ε ′ values fit led to relations between $$~{\varepsilon ^\prime }$$ ε ′ and the frequency, on one hand, and between $$~{\varepsilon ^\prime }$$ ε ′ and the electric conductivity of the polysilicon layers on the other. These relations make it possible to interpolate directly between two experimental points for a given frequency. The analysis of the results shows that the values of $$~{\varepsilon ^\prime }$$ ε ′ , ε″, and tan δ decrease with increasing frequency. This is due to the fact that in the region of low frequencies, interfacial polarization occurs easily, and the interface states between Si and SiO2 contribute to the improvement of the dielectric properties of the PolySi/SiO2/cSi structures. The study also emphasizes that the ac electric conductivity increases with the increase in frequency and doping level; this causes to the reduction in series resistance.

Journal

Applied Physics A: Materials Science ProcessingSpringer Journals

Published: Feb 23, 2018

References

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