The results of X-ray structural investigations and current-voltage measurements of the HfO2/Si(100) structures are presented. The HfO2 films of 50 nm thickness were deposited in a Si substrate by high-frequency magnetron sputtering in argon plasma and subjected to rapid thermal annealing at 500, 700, and/or 800°C in the Ar or O2 ambient. It is shown that the HfO2 films become polycrystalline after annealing. The presence of various crystalline phases in them and the form of the I–V characteristics of the Al/HfO2/Si(100) test structures strongly depend on the growth conditions and the gas ambient during the rapid thermal annealing. It is established that the HfO2 films deposited at a high-frequency bias at a substrate of −7 V during the growth and then passed through rapid thermal treatment in the O2 ambient at 700°C have the highest breakdown voltages.
Russian Microelectronics – Springer Journals
Published: Nov 9, 2011
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