An Auger-spectroscopy investigation is conducted into the formation of the TiN/CoSi2 system by rapid thermal annealing of a Co/Ti/Si structure in a nitrogen atmosphere. Two different directions of temperature gradient under annealing are considered. It is established that TiN/CoSi2 formation occurs only when the temperature on the coated side of the specimen grows with depth. The influence of different factors is discussed.
Russian Microelectronics – Springer Journals
Published: Jul 22, 2008
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