Formation of nanosized elements of microwave transistor gates by ion beam lithography

Formation of nanosized elements of microwave transistor gates by ion beam lithography A technique for forming a nanosized gate of a high-power microwave transistor is proposed. The optimal exposure parameters of 950-PMMA-A2 and ELP-20 resists are established. The technological route of ion beam lithography with the use of multilayer resists is investigated. A technique for fabricating a continuous mesh of earthed alignment marks formed on the ion-sensitive resist to visualize the alignment marks on a dielectric substrate by ion microscopy is developed. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Formation of nanosized elements of microwave transistor gates by ion beam lithography

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Publisher
Pleiades Publishing
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739716070106
Publisher site
See Article on Publisher Site

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