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/lp/springer_journal/formation-of-copper-based-interconnects-for-gaas-monolithic-microwave-ktDo1vDhSk
- Publisher
- Pleiades Publishing
- Copyright
- Copyright © 2015 by Pleiades Publishing, Ltd.
- Subject
- Engineering; Electrical Engineering
- ISSN
- 1063-7397
- eISSN
- 1608-3415
- D.O.I.
- 10.1134/S1063739715030038
- Publisher site
- See Article on Publisher Site
Abstract
Technological solutions are presented for forming interconnect metallization of GaAs monolithic microwave integrated circuits (MMICs) based on the W/Cu/WN x thin-film composition. A peculiarity of these solutions is that, for the first time, copper conductors with the surface completely surrounded by layers of diffusion barriers are created using the liftoff method traditionally employed for producing GaAs MMICs. Copper conductors 380 nm thick were deposited by E-beam evaporation, while the layers of planar and sidewall diffusion barriers based on W and WN x were sputtered. For successful formation of the sidewall diffusion barriers on the vertical surfaces of the copper conductors, the profile optimization of the photoresist mask was carried out. Modes of removing the photoresist mask are presented that enable effective elimination of the metallic “veils” formed on the vertical walls of the photoresist mask in the process of sputtering of diffusion barriers. The interconnects W/Cu/WN x were integrated into the manufacturing process of GaAs microwave low-noise amplifiers based on the pHEMT with 250 nm T-gates.
Journal
Russian Microelectronics – Springer Journals
Published: Jul 6, 2015
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