Formation of a submicron GaAs MESFET gate using a four-layer dielectric dummy gate

Formation of a submicron GaAs MESFET gate using a four-layer dielectric dummy gate In the present study, a technology for the formation of a submicron GaAs MESFET gate of 0.5–0.1 μm in length and above 0.5 μm in height using a four-layer dielectric dummy gate was developed. Techniques of chemical and plasma-chemical deposition from a gaseous phase, differing in etch rates in a buffer solution of hydrofluoric acid, were used to prepare silicon oxide films. Different constructions of a multilayer structure with varying sequences of layers and thicknesses were studied. The conditions of chemical and plasma-chemical etching of dielectrics allowing a dummy double-T-gate to be formed were determined. The employment of a sophisticatedly shaped dummy gate made it possible to obtain a gate electrode of a large cross section with a low length. The possibility in principle to fabricate a MESFET gate with a length of up to Lg = 0.1 μm using lithographic procedures with a minimal resolution of 1.0 μm was demonstrated. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Formation of a submicron GaAs MESFET gate using a four-layer dielectric dummy gate

Loading next page...
 
/lp/springer_journal/formation-of-a-submicron-gaas-mesfet-gate-using-a-four-layer-FJ3URCr7SY
Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712030031
Publisher site
See Article on Publisher Site

Abstract

In the present study, a technology for the formation of a submicron GaAs MESFET gate of 0.5–0.1 μm in length and above 0.5 μm in height using a four-layer dielectric dummy gate was developed. Techniques of chemical and plasma-chemical deposition from a gaseous phase, differing in etch rates in a buffer solution of hydrofluoric acid, were used to prepare silicon oxide films. Different constructions of a multilayer structure with varying sequences of layers and thicknesses were studied. The conditions of chemical and plasma-chemical etching of dielectrics allowing a dummy double-T-gate to be formed were determined. The employment of a sophisticatedly shaped dummy gate made it possible to obtain a gate electrode of a large cross section with a low length. The possibility in principle to fabricate a MESFET gate with a length of up to Lg = 0.1 μm using lithographic procedures with a minimal resolution of 1.0 μm was demonstrated.

Journal

Russian MicroelectronicsSpringer Journals

Published: May 4, 2012

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Search

Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly

Organize

Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.

Access

Get unlimited, online access to over 18 million full-text articles from more than 15,000 scientific journals.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve

Freelancer

DeepDyve

Pro

Price

FREE

$49/month
$360/year

Save searches from
Google Scholar,
PubMed

Create lists to
organize your research

Export lists, citations

Read DeepDyve articles

Abstract access only

Unlimited access to over
18 million full-text articles

Print

20 pages / month

PDF Discount

20% off