Formation and structure of mesoporous silicon

Formation and structure of mesoporous silicon This paper provides the results of studying the formation kinetics and the structure of mesoporous silicon layers obtained by electrochemical anodization in an electrolyte based on 12% aqueous hydrofluoric acid. The electrolyte consisted only of deionized water and hydrofluoric acid and contained no organic additives in order to prevent contamination of porous silicon with carbon during the anodization. All the experiments were carried out on whole silicon wafers 100 mm in diameter, rather than samples of a small size, which are often used to save silicon. As the initial substrates we used monocrystalline silicon wafers of brand KES-0.01, which were cut from the ingots produced by the Czochralski method. Dependences of the thickness of porous silicon layers, its growth rate, and the volume porosity on the anodic current density and the anodization time are determined. Scanning electron microscopy was used to study the structure of porous silicon layers and to define the size and density of the pore channels. The regimes of obtaining homogeneous porous silicon layers for their subsequent use as buffer layers in epitaxy are found. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Formation and structure of mesoporous silicon

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Publisher
Springer Journals
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373971408006X
Publisher site
See Article on Publisher Site

Abstract

This paper provides the results of studying the formation kinetics and the structure of mesoporous silicon layers obtained by electrochemical anodization in an electrolyte based on 12% aqueous hydrofluoric acid. The electrolyte consisted only of deionized water and hydrofluoric acid and contained no organic additives in order to prevent contamination of porous silicon with carbon during the anodization. All the experiments were carried out on whole silicon wafers 100 mm in diameter, rather than samples of a small size, which are often used to save silicon. As the initial substrates we used monocrystalline silicon wafers of brand KES-0.01, which were cut from the ingots produced by the Czochralski method. Dependences of the thickness of porous silicon layers, its growth rate, and the volume porosity on the anodic current density and the anodization time are determined. Scanning electron microscopy was used to study the structure of porous silicon layers and to define the size and density of the pore channels. The regimes of obtaining homogeneous porous silicon layers for their subsequent use as buffer layers in epitaxy are found.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 26, 2014

References

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