Formation and Properties of an Oxide Film on an Si3N4Surface under Thermal Oxidation

Formation and Properties of an Oxide Film on an Si3N4Surface under Thermal Oxidation The formation mechanism, composition, and properties of an oxide film that grows on an Si3N4 mask during the LOCOS process are studied experimentally. The effect of the HF etching of the mask oxide film on the profile of the bird's beak is investigated for different etching conditions. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Formation and Properties of an Oxide Film on an Si3N4Surface under Thermal Oxidation

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1023909703326
Publisher site
See Article on Publisher Site

Abstract

The formation mechanism, composition, and properties of an oxide film that grows on an Si3N4 mask during the LOCOS process are studied experimentally. The effect of the HF etching of the mask oxide film on the profile of the bird's beak is investigated for different etching conditions.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 11, 2004

References

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