Formation and certain properties of zinc chalcogenide nanolayers on semiconductor matrices

Formation and certain properties of zinc chalcogenide nanolayers on semiconductor matrices The generalized results on the synthesis of zinc chalcogenide ultrathin layers using an atomic layer deposition on the surface of silicon and AIIIBV compounds have been presented. The main regularities inherent in the chemosorption of the components and the conditions required for the layered mechanism responsible for the formation of nanostructures of the compounds mentioned are established. The electrical properties of the synthesized nanostructures have been estimated. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Formation and certain properties of zinc chalcogenide nanolayers on semiconductor matrices

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Publisher
Springer Journals
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739716010042
Publisher site
See Article on Publisher Site

Abstract

The generalized results on the synthesis of zinc chalcogenide ultrathin layers using an atomic layer deposition on the surface of silicon and AIIIBV compounds have been presented. The main regularities inherent in the chemosorption of the components and the conditions required for the layered mechanism responsible for the formation of nanostructures of the compounds mentioned are established. The electrical properties of the synthesized nanostructures have been estimated.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jan 23, 2016

References

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