Foreword to the special issue on radiation-hardness evaluation and prediction in microelectronics

Foreword to the special issue on radiation-hardness evaluation and prediction in microelectronics ISSN 10637397, Russian Microelectronics, 2010, Vol. 39, No. 2, pp. 73–73. © Pleiades Publishing, Ltd., 2010. Original Russian Text © Editorial Board, 2010, published in Mikroelektronika, 2010, Vol. 39, No. 2, pp. 83 Foreword to the Special Issue on RadiationHardness Evaluation and Prediction in Microelectronics DOI: 10.1134/S1063739710020010 Today, progress in defenserelated electronic tech caused by highenergy single nuclear particles, nology relies heavily on using highdensity micro or become increasingly relevant with growing packing nanoelectronic components to implement fast algo density. rithms of data processing or communication. This special issue is concerned with the modeling, Ionizing radiations, whether natural or manmade, simulation, and prediction of ionizingradiation represent a major factor in the operation of defense effects in microelectronics from the standpoint of the related semiconductor electronics, making its radia performance of components and systems. The papers tionhardness evaluation and prediction a vital task. reflect the current trend toward more extensive use of computer and physical simulation of radiation damage This is particularly true of spaceborne systems. The to facilitate the design of radiationhard electronics. last ten years have seen revolutionary changes in space Particular attention is given to microwave electronic electronics caused by conversion to integrated cir products due to their obvious relevance to space com cuits, bringing dramatic improvements in functional munications. ity, economic efficiency, and performance. At the same time, the industry has yet to meet the challenge Professor Tatevos Mamikonovich Agakhanyan, an of increasing the lifetime of spaceborne systems to ten editor of Mikroelektronika since its beginning, was the or even twelve years, up from the current three to five moving spirit behind this publication. It might be seen years, when the equipment is directly exposed to a as a testimony to his accomplishments in radiation space environment. The problem of enhancing the hard electronics since the mid1970s, when he started radiation hardness of integrated circuits has thus come a special research group at the Moscow Engineering into sharp focus, for radiationinduced failures will Physics Institute. This activity continues to yield often be the main limiting factor in the lifetime of such important results and to influence related work at systems. In particular, singleevent effects, i.e., ones other institutions. Russian Microelectronics Springer Journals

Foreword to the special issue on radiation-hardness evaluation and prediction in microelectronics

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SP MAIK Nauka/Interperiodica
Copyright © 2010 by Pleiades Publishing, Ltd.
Engineering; Electrical Engineering
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