ISSN 1063-7397, Russian Microelectronics, 2008, Vol. 37, No. 1, p. 1. © Pleiades Publishing, Ltd., 2008. Original Russian Text © The Editorial Board, 2008, published in Mikroelektronika, 2008, Vol. 37, No. 1, p. 3. Foreword to the Special Issue on Ionizing-Radiation Effects in Microelectronics DOI: 10.1134/S1063739708010010 As integrated circuits ﬁnd more and more uses, a need arises to assess their resistance to different forms of ion- izing radiation, taking into account the character of modern technology and operating conditions. This task makes it necessary to further improve techniques and facilities for evaluating and predicting the radiation hardness of microelectronic circuits and systems. This special issue represents a continuation of those published in 2004 and 2006 (Mikroelektronika, 2004, vol. 33, no. 2; 2006, vol. 35, no. 3). The papers presented here are mostly concerned with the modeling and simulation of different ionizing-radia- tion effects on integrated-circuit parameters. They reﬂect the current trend toward wider use of computer and phys- ical simulation of radiation effects to facilitate the design and testing of radiation-hard electronics. As with the 2004 and 2006 special issues, Professor Tatevos Mamikonovich Agakhanyan, a long-time editor of Mikroelektronika, was the moving spirit behind this publication. It might be seen as a testimony to his accomplish- ments in radiation-hard electronics since the mid-1970s, when he started a special research group at the Moscow Engineering Physics Institute. This activity continues to yield important results and to inﬂuence related work at other institutions.
Russian Microelectronics – Springer Journals
Published: Jan 18, 2011
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