ISSN 1063-7397, Russian Microelectronics, 2006, Vol. 35, No. 3, p. 137. © Pleiades Publishing, Inc., 2006.
Original Russian Text © Editorial Board, 2006, published in Mikroelektronika, 2006, Vol. 35, No. 3, p. 163.
As integrated circuits ﬁnd more and more uses, a
need arises to assess their resistance to different forms
of ionizing radiation including high- or low-dose-rate
continuous radiation, a train of radiation pulses, etc.
This task makes it necessary to further develop tech-
niques and facilities for evaluating and predicting the
radiation hardness of microelectronic circuits and sys-
This special issue represents a continuation of that
published in 2004 (
, 2004, vol. 33,
The papers presented here are mostly concerned
with the modeling and simulation of ionizing-radiation
effects on integrated-circuit parameters over a wide
range of dose rates and irradiation patterns. They reﬂect
the current trend toward more extensive use of com-
puter and physical simulation of radiation damage to
facilitate the design of radiation-hard electronics.
As with the 2004 special issue, Professor Tatevos
Mamikonovich Agakhanyan, a long-time editor of
, was the moving spirit behind this publi-
cation. It might be seen as a testimony to his accom-
plishments in radiation-hard electronics since the mid-
1970s, when he started a special research group at the
Moscow Engineering Physics Institute (State Univer-
sity). This activity continues to yield important results
and to inﬂuence related work at other institutions.
Foreword to the Special Issue
on Ionizing-Radiation Effects in Microelectronics