Foreword to the special issue on ionizing-radiation effects in microelectronics

Foreword to the special issue on ionizing-radiation effects in microelectronics ISSN 1063-7397, Russian Microelectronics, 2006, Vol. 35, No. 3, p. 137. © Pleiades Publishing, Inc., 2006. Original Russian Text © Editorial Board, 2006, published in Mikroelektronika, 2006, Vol. 35, No. 3, p. 163. Foreword to the Special Issue on Ionizing-Radiation Effects in Microelectronics DOI: 10.1134/S1063739706030012 As integrated circuits find more and more uses, a range of dose rates and irradiation patterns. They reflect need arises to assess their resistance to different forms the current trend toward more extensive use of com- of ionizing radiation including high- or low-dose-rate puter and physical simulation of radiation damage to continuous radiation, a train of radiation pulses, etc. facilitate the design of radiation-hard electronics. This task makes it necessary to further develop tech- As with the 2004 special issue, Professor Tatevos niques and facilities for evaluating and predicting the Mamikonovich Agakhanyan, a long-time editor of Mik- radiation hardness of microelectronic circuits and sys- tems. roelektronika, was the moving spirit behind this publi- cation. It might be seen as a testimony to his accom- This special issue represents a continuation of that published in 2004 (Mikroelektronika, 2004, vol. 33, plishments in radiation-hard electronics since the mid- no. 2). 1970s, when he started a special research group at the Moscow Engineering Physics Institute (State Univer- The papers presented here are mostly concerned sity). This activity continues to yield important results with the modeling and simulation of ionizing-radiation effects on integrated-circuit parameters over a wide and to influence related work at other institutions. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Foreword to the special issue on ionizing-radiation effects in microelectronics

Russian Microelectronics , Volume 35 (3) – Apr 22, 2006
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Publisher
Nauka/Interperiodica
Copyright
Copyright © 2006 by Pleiades Publishing, Inc.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739706030012
Publisher site
See Article on Publisher Site

Abstract

ISSN 1063-7397, Russian Microelectronics, 2006, Vol. 35, No. 3, p. 137. © Pleiades Publishing, Inc., 2006. Original Russian Text © Editorial Board, 2006, published in Mikroelektronika, 2006, Vol. 35, No. 3, p. 163. Foreword to the Special Issue on Ionizing-Radiation Effects in Microelectronics DOI: 10.1134/S1063739706030012 As integrated circuits find more and more uses, a range of dose rates and irradiation patterns. They reflect need arises to assess their resistance to different forms the current trend toward more extensive use of com- of ionizing radiation including high- or low-dose-rate puter and physical simulation of radiation damage to continuous radiation, a train of radiation pulses, etc. facilitate the design of radiation-hard electronics. This task makes it necessary to further develop tech- As with the 2004 special issue, Professor Tatevos niques and facilities for evaluating and predicting the Mamikonovich Agakhanyan, a long-time editor of Mik- radiation hardness of microelectronic circuits and sys- tems. roelektronika, was the moving spirit behind this publi- cation. It might be seen as a testimony to his accom- This special issue represents a continuation of that published in 2004 (Mikroelektronika, 2004, vol. 33, plishments in radiation-hard electronics since the mid- no. 2). 1970s, when he started a special research group at the Moscow Engineering Physics Institute (State Univer- The papers presented here are mostly concerned sity). This activity continues to yield important results with the modeling and simulation of ionizing-radiation effects on integrated-circuit parameters over a wide and to influence related work at other institutions.

Journal

Russian MicroelectronicsSpringer Journals

Published: Apr 22, 2006

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