Highlighted ferromagnetic interactions are required for two-dimensional (2D) metal-free semiconductor nanosheets. Here, we employ phosphorus doping method to introduce robust room-temperature ferromagnetism (FM) into boron nitride nanosheets (BNNSs). After phosphorus particle-assisted ball milling exfoliation and calcination, phosphorus atoms are forced into lattice structure, causing regional structural distortion and point defects. Thus, the saturation magnetization of the as-prepared phosphorus-doped BNNSs (P-BNNSs) can reach up to 0.143 emu g−1 and lead to a Curie temperature above 350 K. The controllably robust FM makes P-BNNSs the most promising 2D metal-free nanomaterials that can be utilized in spintronic devices.
Journal of Materials Science: Materials in Electronics – Springer Journals
Published: May 27, 2017
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