Features of the integration of graphenes in microelectronic technology

Features of the integration of graphenes in microelectronic technology Techniques have been developed for forming integrated graphene structures on a silicon wafer surface by mechanical and chemical splitting and chemical vapor deposition. The imperfection of the fabricated structures has been investigated by atomic force microscopy and X-ray diffraction. For the aerosol technique of deposition of mechanically spit graphite, the regularity has been revealed in the reduction of the graphene sheet size with increasing pressure. The correlation of the topographic defects of graphene material and the structural defects observed in X-ray diffraction patterns is demonstrated. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals
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Publisher
Pleiades Publishing
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714070038
Publisher site
See Article on Publisher Site

Abstract

Techniques have been developed for forming integrated graphene structures on a silicon wafer surface by mechanical and chemical splitting and chemical vapor deposition. The imperfection of the fabricated structures has been investigated by atomic force microscopy and X-ray diffraction. For the aerosol technique of deposition of mechanically spit graphite, the regularity has been revealed in the reduction of the graphene sheet size with increasing pressure. The correlation of the topographic defects of graphene material and the structural defects observed in X-ray diffraction patterns is demonstrated.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 14, 2014

References

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