Features of the formation of a low-resistance Ge/Au/Ni/Ti/Au ohmic contact to n-i-GaAs

Features of the formation of a low-resistance Ge/Au/Ni/Ti/Au ohmic contact to n-i-GaAs The influence of the modes and conditions of deposition of the Ti film of the diffusion barrier on the parameters of the Ge/Au/Ni/Ti/Au ohmic contacts to n-i-GaAs were investigated. Deposition modes of the Ti films, in which a 50-fold increase in the reduced contact resistance, as well as an increase in thermal stability of the morphology of the edge of contact pads, are determined. The factors affecting the reduced contact resistance are the angle under which the Ti atoms enter the substrate surface, the deposition rate of the Ti film, and the pressure of the residual atmosphere during deposition of the film of the diffusion barrier. The factor affecting the thermal stability of the morphology of the edge of the contact pads is apparently the angle under which the Ti atoms enter the substrate surface. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Features of the formation of a low-resistance Ge/Au/Ni/Ti/Au ohmic contact to n-i-GaAs

Loading next page...
 
/lp/springer_journal/features-of-the-formation-of-a-low-resistance-ge-au-ni-ti-au-ohmic-gNPsibhTiO
Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712020060
Publisher site
See Article on Publisher Site

Abstract

The influence of the modes and conditions of deposition of the Ti film of the diffusion barrier on the parameters of the Ge/Au/Ni/Ti/Au ohmic contacts to n-i-GaAs were investigated. Deposition modes of the Ti films, in which a 50-fold increase in the reduced contact resistance, as well as an increase in thermal stability of the morphology of the edge of contact pads, are determined. The factors affecting the reduced contact resistance are the angle under which the Ti atoms enter the substrate surface, the deposition rate of the Ti film, and the pressure of the residual atmosphere during deposition of the film of the diffusion barrier. The factor affecting the thermal stability of the morphology of the edge of the contact pads is apparently the angle under which the Ti atoms enter the substrate surface.

Journal

Russian MicroelectronicsSpringer Journals

Published: May 4, 2012

References

You’re reading a free preview. Subscribe to read the entire article.


DeepDyve is your
personal research library

It’s your single place to instantly
discover and read the research
that matters to you.

Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.

All for just $49/month

Explore the DeepDyve Library

Unlimited reading

Read as many articles as you need. Full articles with original layout, charts and figures. Read online, from anywhere.

Stay up to date

Keep up with your field with Personalized Recommendations and Follow Journals to get automatic updates.

Organize your research

It’s easy to organize your research with our built-in tools.

Your journals are on DeepDyve

Read from thousands of the leading scholarly journals from SpringerNature, Elsevier, Wiley-Blackwell, Oxford University Press and more.

All the latest content is available, no embargo periods.

See the journals in your area

DeepDyve Freelancer

DeepDyve Pro

Price
FREE
$49/month

$360/year
Save searches from Google Scholar, PubMed
Create lists to organize your research
Export lists, citations
Read DeepDyve articles
Abstract access only
Unlimited access to over
18 million full-text articles
Print
20 pages/month
PDF Discount
20% off