Features of charge formation and relaxation in SOS structures under the effect of ionizing radiation

Features of charge formation and relaxation in SOS structures under the effect of ionizing radiation Features of charge formation in SOS structures under irradiation are investigated experimentally. A model that makes it possible to describe the dependence that the kinetics of charge accumulation and relaxation in the Si-Al2O3 system has on the field strength, temperature, intensity, and type of ionizing radiation is suggested. The influence of the two-dimensional character of processes on the charge formation in the SOS MOS devices is investigated. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Features of charge formation and relaxation in SOS structures under the effect of ionizing radiation

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2011 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739711030085
Publisher site
See Article on Publisher Site

Abstract

Features of charge formation in SOS structures under irradiation are investigated experimentally. A model that makes it possible to describe the dependence that the kinetics of charge accumulation and relaxation in the Si-Al2O3 system has on the field strength, temperature, intensity, and type of ionizing radiation is suggested. The influence of the two-dimensional character of processes on the charge formation in the SOS MOS devices is investigated.

Journal

Russian MicroelectronicsSpringer Journals

Published: May 22, 2011

References

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