Features of charge formation in SOS structures under irradiation are investigated experimentally. A model that makes it possible to describe the dependence that the kinetics of charge accumulation and relaxation in the Si-Al2O3 system has on the field strength, temperature, intensity, and type of ionizing radiation is suggested. The influence of the two-dimensional character of processes on the charge formation in the SOS MOS devices is investigated.
Russian Microelectronics – Springer Journals
Published: May 22, 2011
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