Arrays of vertically well-aligned ZnO nanoneedles were successfully grown on seeded porous silicon substrate through electric field-assisted aqueous solution method. The surface morphologies of needle-like ZnO nanostructures were studied using field-emission scanning electron microscopy and transmission electron microscopy. Meanwhile, structural and morphological analyses displayed wurtzite nanostructures with strong c-axis oriented crystal structure and preferred (0 0 2) orientation. The photoluminescence spectra revealed intensive and sharp ultraviolet light emission at 382 nm with high intensity and low broad visible light emission in a 500–700 nm wavelength range confirming high optical quality of the formed ZnO nanoneedles. The fabrication and characterization of a metal–semiconductor–metal ultraviolet photodetector based on ZnO nanoneedles were studied. Upon exposure to 325 nm light (1.6 mW/cm2) at 3 V bias voltage, the device displayed 1.98 A/W responsivity and 10.48 photosensitivity. Furthermore, the response and the recovery times measured under these conditions were 86 and 83 ms, respectively.
Journal of Materials Science: Materials in Electronics – Springer Journals
Published: Jan 3, 2018
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 12 million articles from more than
10,000 peer-reviewed journals.
All for just $49/month
It’s easy to organize your research with our built-in tools.
All the latest content is available, no embargo periods.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud