Fabrication of Strain-Relaxed Si1 − x Gex/Si(001) Buffer Layers of Low Surface Roughness

Fabrication of Strain-Relaxed Si1 − x Gex/Si(001) Buffer Layers of Low Surface Roughness The results are presented of the fabrication of strain-relaxed graded Si1 − x Gex/Si(001) buffer layers with a maximum Ge fraction of about 0.25 that have a low density of threading dislocations (<106 cm−2) and low surface roughness. The buffer layers are grown by atmospheric-pressure hydride CVD. It is found that chemical mechanical polishing can reduce their surface roughness to a level comparable with that of the original Si(001) substrates. It is shown that the polished buffer layers can serve as substrates for MBE-grown SiGe/Si heterostructures. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Fabrication of Strain-Relaxed Si1 − x Gex/Si(001) Buffer Layers of Low Surface Roughness

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Publisher
Springer Journals
Copyright
Copyright © 2005 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1007/s11180-005-0029-0
Publisher site
See Article on Publisher Site

Abstract

The results are presented of the fabrication of strain-relaxed graded Si1 − x Gex/Si(001) buffer layers with a maximum Ge fraction of about 0.25 that have a low density of threading dislocations (<106 cm−2) and low surface roughness. The buffer layers are grown by atmospheric-pressure hydride CVD. It is found that chemical mechanical polishing can reduce their surface roughness to a level comparable with that of the original Si(001) substrates. It is shown that the polished buffer layers can serve as substrates for MBE-grown SiGe/Si heterostructures.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 15, 2005

References

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