A method for the fabrication of submicron (~0.5 μm) structures is presented. It includes the plasma formation of a three-layer mask, electron-beam exposure, plasma development, and anisotropic plasma etching of a resist and silicon oxide. The development in a fluorine-containing plasma forms the negative image of the exposed pattern (a set of parallel strips). The minimum resolution was 0.5 μm at the exposure dose 8 x l0-4C/cm2. The minimum exposure dose at which separate lines are developed was equal to 1 x 10-4 C/cm2
Russian Microelectronics – Springer Journals
Published: Dec 4, 2007
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