Extracting the fitting parameters for the conversion model of enhanced low dose rate sensitivity in bipolar devices

Extracting the fitting parameters for the conversion model of enhanced low dose rate sensitivity... A technique for extracting the fitting parameters of the conversion model of enhanced low dose rate sensitivity in bipolar integrated circuits is proposed. This technique is based on studying postirradiation annealing and high-temperature irradiation. Proceeding from the experimental results for two types of bipolar transistors, the parameters of the conversion model are determined and the S-shaped characteristics of the examined devices are reconstructed. These data can be used to predict their long-term lifetime in space under exposure to low dose rates of ionizing radiation. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Extracting the fitting parameters for the conversion model of enhanced low dose rate sensitivity in bipolar devices

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712040026
Publisher site
See Article on Publisher Site

Abstract

A technique for extracting the fitting parameters of the conversion model of enhanced low dose rate sensitivity in bipolar integrated circuits is proposed. This technique is based on studying postirradiation annealing and high-temperature irradiation. Proceeding from the experimental results for two types of bipolar transistors, the parameters of the conversion model are determined and the S-shaped characteristics of the examined devices are reconstructed. These data can be used to predict their long-term lifetime in space under exposure to low dose rates of ionizing radiation.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jan 4, 2013

References

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