A technique for extracting the fitting parameters of the conversion model of enhanced low dose rate sensitivity in bipolar integrated circuits is proposed. This technique is based on studying postirradiation annealing and high-temperature irradiation. Proceeding from the experimental results for two types of bipolar transistors, the parameters of the conversion model are determined and the S-shaped characteristics of the examined devices are reconstructed. These data can be used to predict their long-term lifetime in space under exposure to low dose rates of ionizing radiation.
Russian Microelectronics – Springer Journals
Published: Jan 4, 2013
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