Experimental studies of the adequacy of laser simulations of dose rate effects in integrated circuits and semiconductor devices

Experimental studies of the adequacy of laser simulations of dose rate effects in integrated... Comparative experimental studies of the responses of typical representatives of integrated circuits (ICs) and semiconductor devices (SDs) with various designs to high-energy pulsed ionizing radiations from simulation facilities and laser simulators have been carried out. The differences between the hardness values under exposure to radiations from simulation facilities and laser simulators have been found to be no larger than the dosimetry errors when the power supply ionization current calibration procedure is used. The shapes of power supply ionization currents and output voltages in the ICs are almost identical qualitatively. The levels and patterns of the functional IC failures are completely identical for both types of radiation sources. As a result, we have proven that a joint application of simulation facilities and laser simulators provides a rational combination of the reliability and efficiency of testing ICs and SDs for hardness to dose rate. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Experimental studies of the adequacy of laser simulations of dose rate effects in integrated circuits and semiconductor devices

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Publisher
Springer Journals
Copyright
Copyright © 2009 by MAIK Nauka
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739709010028
Publisher site
See Article on Publisher Site

Abstract

Comparative experimental studies of the responses of typical representatives of integrated circuits (ICs) and semiconductor devices (SDs) with various designs to high-energy pulsed ionizing radiations from simulation facilities and laser simulators have been carried out. The differences between the hardness values under exposure to radiations from simulation facilities and laser simulators have been found to be no larger than the dosimetry errors when the power supply ionization current calibration procedure is used. The shapes of power supply ionization currents and output voltages in the ICs are almost identical qualitatively. The levels and patterns of the functional IC failures are completely identical for both types of radiation sources. As a result, we have proven that a joint application of simulation facilities and laser simulators provides a rational combination of the reliability and efficiency of testing ICs and SDs for hardness to dose rate.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jan 8, 2009

References

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