Excellent dielectric performance and nonlinear electrical behaviors of Zr-doped CaCu3Ti4O12 thin films

Excellent dielectric performance and nonlinear electrical behaviors of Zr-doped CaCu3Ti4O12 thin... The dielectric and nonlinear current–voltage properties of CaCu3Ti4−x Zr x O12 (x = 0, 0.05, 0.1, 0.15 and 0.2) thin films prepared by the modified sol–gel method and annealed at 750 °C for 1 h were systematically studied. Zr doping resulted in a significant reduction in the mean grain size from 177.4 to 42.9 nm. The dielectric properties of the thin films increased significantly with the increase of Zr content from x = 0 to 0.2, indicating the importance of microstructure in controlling the dielectric properties of CaCu3Ti4−x Zr x O12 thin films. A highly frequency-independent giant dielectric permittivity from 102 to 106 Hz was successfully achieved in CaCu3Ti3.8Zr0.2O12 thin film, which possessed a very high dielectric permittivity value of 7591 and a very low tanδ value of 0.023 at 1 kHz. The results indicated that reduction in the mean grain size affected the number of polarized ions per unit volume n 0 (to improve ε′) and the number of grain boundaries (to reduce tanδ). CaCu3Ti3.75Zr0.15O12 thin film showed the highest nonlinear coefficient (5.8) and lowest leakage current (131 μA). In addition, the relaxation mechanism based on the internal barrier layer capacitance model and the back-to-back dual Schottky barrier model were used to explain the dielectric properties and the nonlinear electrical behaviors of the samples. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Excellent dielectric performance and nonlinear electrical behaviors of Zr-doped CaCu3Ti4O12 thin films

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Publisher
Springer US
Copyright
Copyright © 2018 by Springer Science+Business Media, LLC, part of Springer Nature
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-8475-0
Publisher site
See Article on Publisher Site

Abstract

The dielectric and nonlinear current–voltage properties of CaCu3Ti4−x Zr x O12 (x = 0, 0.05, 0.1, 0.15 and 0.2) thin films prepared by the modified sol–gel method and annealed at 750 °C for 1 h were systematically studied. Zr doping resulted in a significant reduction in the mean grain size from 177.4 to 42.9 nm. The dielectric properties of the thin films increased significantly with the increase of Zr content from x = 0 to 0.2, indicating the importance of microstructure in controlling the dielectric properties of CaCu3Ti4−x Zr x O12 thin films. A highly frequency-independent giant dielectric permittivity from 102 to 106 Hz was successfully achieved in CaCu3Ti3.8Zr0.2O12 thin film, which possessed a very high dielectric permittivity value of 7591 and a very low tanδ value of 0.023 at 1 kHz. The results indicated that reduction in the mean grain size affected the number of polarized ions per unit volume n 0 (to improve ε′) and the number of grain boundaries (to reduce tanδ). CaCu3Ti3.75Zr0.15O12 thin film showed the highest nonlinear coefficient (5.8) and lowest leakage current (131 μA). In addition, the relaxation mechanism based on the internal barrier layer capacitance model and the back-to-back dual Schottky barrier model were used to explain the dielectric properties and the nonlinear electrical behaviors of the samples.

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: Jan 11, 2018

References

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