Evaluation of sensitivity parameters for single event latchup effect in CMOS LSI ICs by pulsed laser backside irradiation tests

Evaluation of sensitivity parameters for single event latchup effect in CMOS LSI ICs by pulsed... The results of computation-experimental modeling of single-event latchup effects under the laser radiation focused on the IC crystal backside—the substrate side—are presented. Possibilities of applying the technique of local laser irradiation to evaluate equivalent linear energy transfer of heavy ions in the case of the laser irradiation from the substrate side of IC crystal are analyzed. The experimental results obtained using the pulsed laser installation and accelerators of charged particles for a series of modern LSI ICs are compared. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Evaluation of sensitivity parameters for single event latchup effect in CMOS LSI ICs by pulsed laser backside irradiation tests

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Publisher
Pleiades Publishing
Copyright
Copyright © 2015 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739715010072
Publisher site
See Article on Publisher Site

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