A method of testing CMOS VLSIs for resistance to the factor of the absorbed dose under the effect of high-intense pulsed ionizing radiation by the results of analysis of the reaction of the LSIC in the radiation field of a sequence of relatively low-intense pulses is suggested and substantiated. The approach makes it possible to evaluate the levels of radiation resistance of CMOS LSICs at small simulating installations under the dose gained in the mode of a series of pulses. Conservatism is provided with respect to charge transfer and relaxation in the oxide of MOS structures being independent of the field mode and sample topology.
Russian Microelectronics – Springer Journals
Published: May 22, 2011
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