1063-7397/04/3302- © 2004 MAIK “Nauka /Interperiodica”
Russian Microelectronics, Vol. 33, No. 2, 2004, pp. 106–110. Translated from Mikroelektronika, Vol. 33, No. 2, 2004, pp. 137–142.
Original Russian Text Copyright © 2004 by Chumakov, Egorov, Mavritsky, Yanenko.
The rate of single-event effects (SEEs) on an inte-
grated circuit (IC) is predicted on the basis of SEE sus-
ceptibility parameters [1–3]. These invariably include
saturation SEE cross section and SEE threshold. The
former is often determined by testing with a
sion source. SEE threshold is more difﬁcult to estimate.
Ion-accelerator testing with varying linear energy trans-
fer (LET) offers the best accuracy, but this way is labo-
rious and costly. As an alternative, picosecond pulses of
sharply focused laser radiation have been employed [3–
5]. The main drawback of this strategy is that it entails
scanning a sharply focused beam over most of the sur-
face. In fact, it may not yield a correct estimate, because
some sensitive regions are located under the metalliza-
tion pattern. The issue cannot be overcome by irradiat-
ing the whole chip with a single laser pulse because a
radiation pulse induces currents up to a few amperes
through the substrate and the power rails and so lowers
the supply voltage, thus affecting the SEE susceptibility
of the chip.
Below we report an evaluation of another method
for estimating SEE threshold and saturation SEE cross
section by pulsed laser irradiation. Its key feature is the
laser spot size being set to its maximum value that does not
lower the supply voltage in the chip under test [6, 7].
Evaluation of Moderately Focused Laser Irradiation
as a Method for Simulating Single-Event Effects
A. I. Chumakov*, A. N. Egorov**, O. B. Mavritsky**, and A. V. Yanenko*
* Specialized Electronic Systems (SPELS), Kashirskoe sh. 31, Moscow, 115409 Russia
** Moscow Institute of Engineering Physics (Technical University), Moscow, Russia
Received April 28, 2003
—A numerical and a physical simulation are reported of single-event upsets and single-event latchups
by laser irradiation with spot diameters ranging from 5 to 50
m. It is shown that the method can be useful for
estimating the threshold values of linear energy transfer if the laser spot covers a number of sensitive regions.
RADIATION-EFFECT MODELING AND SIMULATION
IN SILICON MICROELECTRONICS
10 100 1000 10000
, rel. units
Qualitative dependence of SEE threshold pulse energy on spot radius for laser irradiation.