A method of reactive etching is proposed in which focused 100-eV O+ ion beams are used for making organic-resist masks 12–24 nm thick with nanometer-sized apertures. Focused-ion-beam and ion-projection-lithography systems with an electrostatic immersion decelerating objective are considered. They are shown to provide an ultimate lateral resolution of ∼14 or ∼21 nm, respectively. Attainable etch rate is estimated. The potential usefulness of resist masks thus obtained is discussed in the context of quantum-computing devices containing quantum dots, quantum wires, and nanoscale conducting tracks.
Russian Microelectronics – Springer Journals
Published: Aug 29, 2006
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