The effect is investigated of temperature variation on the accuracy of laser simulation of the transient radiation response (dose-rate effects) in silicon devices and circuits. Temperature-dependent absorption is shown to be the most important factor when the simulation wavelength is 1.06–1.08 μm, the first harmonic of a Nd laser. Computational formulas are derived for equivalent dose rate subject to temperature as part of the investigation. Its results are found to be consistent with experimental data obtained on test structures and some CMOS circuits.
Russian Microelectronics – Springer Journals
Published: Jan 18, 2011
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