The effect of external discharge parameters and the composition of a plasma-forming Cl2 + H2 mixture on electrophysical plasma characteristics and GaAs etching are studied. Mechanisms of volume and heterogeneous processes are considered. It is shown that high-rate cleaning of active surface centers due to ion- and radiation-stimulated desorption of interaction products is responsible for the extremum in the dependence of the etch rate on the plasma composition.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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