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A.I. Chumakov (2004)
Deistvie kosmicheskoi radiatsii na IS
J. Pickel (1996)
Single-event effects rate predictionIEEE Transactions on Nuclear Science, 43
G. Messenger, M. Ash (1997)
Single Event Phenomena
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Laboratory tests for single-event effectsIEEE Transactions on Nuclear Science, 43
A. Chumakov, A. Egorov, O. Mavritsky, A. Yanenko (2004)
Evaluation of Moderately Focused Laser Irradiation as a Method for Simulating Single-Event EffectsRussian Microelectronics, 33
A. Chumakov (2006)
Modeling rail-span collapse in ICs exposed to a single radiation pulseRussian Microelectronics, 35
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Comparison between SRAM SEE Cross-Section from Ion Beam Testing with Those Obtained Using a New Picosecond Pulsed Laser FacilityIEEE Trans. Nucl. Sci., 47
A. Chumakov, V. Gontar (2004)
Predicting the Failure Threshold of Dose Rate for ICs Exposed to Pulsed Ionizing Radiation of Arbitrary Pulse ShapeRussian Microelectronics, 33
R. Jones, A. Chugg, C. Jones, P. Duncan, Chris Dyer, C. Sanderson (1999)
Comparison between SRAM SEE cross-sections from ion beam testing with those obtained using a new picosecond pulsed laser facility1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)
A. Chumakov, A. Egorov, O. Mavritsky, A. Nikiforov, A. Yanenko (1997)
Single event latchup threshold estimation based on laser dose rate test resultsIEEE Transactions on Nuclear Science, 44
The results are presented of a computer and physical simulation concerned with the estimation of CMOS-circuit susceptibility to single-event latchup. A laser-simulation procedure is proposed and tested in which only the most sensitive areas are irradiated. The estimates are found to agree with the measurements.
Russian Microelectronics – Springer Journals
Published: Jan 18, 2011
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