Error-correction coding in CMOS RAM resistant to the effect of single nuclear particles

Error-correction coding in CMOS RAM resistant to the effect of single nuclear particles Coders/decoders that are used in RAM to enhance the data storage reliability on exposure to single nuclear particles are analyzed. If the numbers of check bits are equal, a Hsiao decoder has a lower signal propagation delay than a decoder of the modified Hamming code. A decoder of the extended Hsiao code with additional check bits has the lowest delay among all decoders. When Hsiao decoders with units with a truncated correction circuit, a symmetrically simplified circuit for error vector calculation, and a circuit forming the error signal without the use of the error vector are used in RAM, the critical path lengths and the occupied chip area may be reduced if the detection of triple errors is excluded. The equal efficiency of Richter decoders and coders/decoders obtained through optimization based on genetic algorithms is substantiated for SEC-DAEC codes. Russian Microelectronics Springer Journals

Error-correction coding in CMOS RAM resistant to the effect of single nuclear particles

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Pleiades Publishing
Copyright © 2015 by Pleiades Publishing, Ltd.
Engineering; Electrical Engineering
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