Erratum to: Variation in luminescence and bandgap of Zn-doped SnO2 nanoparticles with thermal decomposition

Erratum to: Variation in luminescence and bandgap of Zn-doped SnO2 nanoparticles with thermal... To plot the curve, the data were processed in the origin software, in which Eq. (1) might be displayed as, Zn doped tin oxide (SnO :Zn) nanoparticles have been 2 synthesized by the chemical precipitation route with dif- col(E)=(1 − col(D)) ∕(2 ∗ col(D)) (2) ferent thermal decomposition temperatures having emis- sion intensities in visible light and widened bandgap. Band gap variation and visible light emission intensities can be controlled by doping and calcination. The average particle sizes estimated by TEM agree with those calcu- The online version of the original article can be found under doi:10.1007/s10854-016-5006-3. lated by XRD to be around 18.48 and 21.44  nm and the optical bandgap values are found to be 4.00 and 4.01  eV * Jianguo Lu in SnO :Zn annealed at 400 and 600 °C, respectively. Blue lujianguo@zju.edu.cn shift in bandgap and decrease in photoluminescence inten- State Key Laboratory of Silicon Materials, School sity is noticed in SnO :Zn nanoparticles with high anneal- of Materials Science and Engineering, Zhejiang University, ing temperature, which is due to large grain sizes and Hangzhou 310027, China Burstein–Moss effect. As the grain sizes grow so defect Department of Physics, Abdul Wali Khan University, density decreases and crystallanity increases. These defects Mardan, Khyber Pukhtunkhwa 23200, http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Materials Science: Materials in Electronics Springer Journals

Erratum to: Variation in luminescence and bandgap of Zn-doped SnO2 nanoparticles with thermal decomposition

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Publisher
Springer US
Copyright
Copyright © 2017 by Springer Science+Business Media, LLC
Subject
Materials Science; Optical and Electronic Materials; Characterization and Evaluation of Materials
ISSN
0957-4522
eISSN
1573-482X
D.O.I.
10.1007/s10854-017-7543-9
Publisher site
See Article on Publisher Site

Abstract

To plot the curve, the data were processed in the origin software, in which Eq. (1) might be displayed as, Zn doped tin oxide (SnO :Zn) nanoparticles have been 2 synthesized by the chemical precipitation route with dif- col(E)=(1 − col(D)) ∕(2 ∗ col(D)) (2) ferent thermal decomposition temperatures having emis- sion intensities in visible light and widened bandgap. Band gap variation and visible light emission intensities can be controlled by doping and calcination. The average particle sizes estimated by TEM agree with those calcu- The online version of the original article can be found under doi:10.1007/s10854-016-5006-3. lated by XRD to be around 18.48 and 21.44  nm and the optical bandgap values are found to be 4.00 and 4.01  eV * Jianguo Lu in SnO :Zn annealed at 400 and 600 °C, respectively. Blue lujianguo@zju.edu.cn shift in bandgap and decrease in photoluminescence inten- State Key Laboratory of Silicon Materials, School sity is noticed in SnO :Zn nanoparticles with high anneal- of Materials Science and Engineering, Zhejiang University, ing temperature, which is due to large grain sizes and Hangzhou 310027, China Burstein–Moss effect. As the grain sizes grow so defect Department of Physics, Abdul Wali Khan University, density decreases and crystallanity increases. These defects Mardan, Khyber Pukhtunkhwa 23200,

Journal

Journal of Materials Science: Materials in ElectronicsSpringer Journals

Published: Jul 26, 2017

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