Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire Tsykaniuk et al. Nanoscale Research Letters (2017) 12:502 DOI 10.1186/s11671-017-2227-1 ERRATUM Open Access Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire 1* 1 1 1 2 2 Bogdan I. Tsykaniuk , Andrii S. Nikolenko , Viktor V. Strelchuk , Viktor M. Naseka , Yuriy I. Mazur , Morgan E. Ware , 2 3 3 4 2 1 Eric A. DeCuir Jr , Bogdan Sadovyi , Jan L. Weyher , Rafal Jakiela , Gregory J. Salamo and Alexander E. Belyaev Erratum Should be exchanged with this one: In the original publication [1] was equation 2 not correctly displayed in the online PDF.  Xing H, Keller S, Wu Y-F, et al (2001) Gallium Furthermore reference 1 and 2 were incorrect. The nitride based transistors. J Phys Condens Matter correct versions can found below: 7139: 7139-7157 Incorrect equation in the online PDF: The equation in the online article has been updated to rectify this error. s=p s=p s=p s=p s=p s=p s=p T ¼ exp iδ −r exp iδ r exp −iδ exp −iδ ; l=ðÞ lþ1 l lþ1;l l l;lþ1 l l s=p Author details l=ðÞ lþ1 V. Lashkaryov Institute of Semiconductor Physics, National Academy of ð2Þ 2 Sciences of Ukraine, Pr. Nauky 41, Kiev 03680, Ukraine. Institute for Nanoscience and Engineering, University of Arkansas, West Dickson 731, Correct equation in the online article: Fayetteville, AR 72701, USA. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska str. 29/37, 01-142 Warsaw, Poland. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, s=p s=p s=p exp iδ −r exp iδ PL-02-668 Warsaw, Poland. l lþ1;l l s=p T ¼ ð2Þ l=ðÞ lþ1 s=p s=p s=p t s=p exp −iδ exp −iδ l l Received: 11 July 2017 Accepted: 11 July 2017 l=ðÞ lþ1 r l;lþ1 Incorrect reference 1 Reference 1. Tsykaniuk BI, Nikolenko AS, Strelchuk VV, Naseka VM, Mazur YI, Ware ME, 1. Manasreh MO, Weaver BD (2001) Local vibrational DeCuir EA Jr, Sadovyi B, Weyher JL, Jakiela R, Salamo GJ, Belyaev AE (2017) modes of carbonhydrogen complexes in proton irradi- Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown ated AlGaN. Mater Res 692:403–409 on Sapphire. Nanoscale Res Lett 12:397. doi:10.1186/s11671-017-2171-0 Should be exchanged with this one: Davis RF (1991) III-V Nitrides for Electronic and Optoelectronic Applications. Proc IEEE 79: 702-712 Incorrect reference 2 2. Sun WH, Chen KM, Yang ZJ, Li J, Tong YZ, Jin SX, Zhang GY, Zhang QL, Qin GG (1999) Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN. J Appl Phys 85:6430–6433 * Correspondence: btsykaniuk@gmail.com V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Pr. Nauky 41, Kiev 03680, Ukraine Full list of author information is available at the end of the article © The Author(s). 2017 Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Nanoscale Research Letters Springer Journals

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

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Publisher
Springer US
Copyright
Copyright © 2017 by The Author(s).
Subject
Materials Science; Nanotechnology; Nanotechnology and Microengineering; Nanoscale Science and Technology; Nanochemistry; Molecular Medicine
ISSN
1931-7573
eISSN
1556-276X
D.O.I.
10.1186/s11671-017-2227-1
Publisher site
See Article on Publisher Site

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