An expression that describes emitter current push-out to the emitter edges with consideration for avalanche multiplication of the current in the collector p–njunction of a bipolar transistor was derived. A strong power dependence of the avalanche multiplication coefficient on the base potential is shown to weaken the push-out effect and to smooth out the current distribution in the system.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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