Electrophysical studies of Me/HfO2/Si(100) structures formed by the electron-beam evaporation method are carried out. The layers of a subgate dielectric are characterized by low values of the state density at the interfaces with silicon (∼1011 cm−2) as compared with values given for films formed by vapor deposition. It is shown that the structures are characterized by small leakage currents and high breakdown voltages.
Russian Microelectronics – Springer Journals
Published: Sep 19, 2009
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