Electrophysical studies of Me/HfO2/Si(100) structures formed by the electron-beam evaporation method are carried out. The layers of a subgate dielectric are characterized by low values of the state density at the interfaces with silicon (∼1011 cm−2) as compared with values given for films formed by vapor deposition. It is shown that the structures are characterized by small leakage currents and high breakdown voltages.
Russian Microelectronics – Springer Journals
Published: Sep 19, 2009
It’s your single place to instantly
discover and read the research
that matters to you.
Enjoy affordable access to
over 18 million articles from more than
15,000 peer-reviewed journals.
All for just $49/month
Query the DeepDyve database, plus search all of PubMed and Google Scholar seamlessly
Save any article or search result from DeepDyve, PubMed, and Google Scholar... all in one place.
All the latest content is available, no embargo periods.
“Whoa! It’s like Spotify but for academic articles.”@Phil_Robichaud