Electrophysical and photoelectrical properties of MIS structures based on MBE grown heteroepitaxial HgCdTe MIS structures with inhomogeneous composition distribution

Electrophysical and photoelectrical properties of MIS structures based on MBE grown... The electrophysical and photoelectrical properties of MIS structures are studied using MBE grown heteroepitaxial HgCdTe with inhomogeneous composition distribution. It is shown that surface varib- and layers with increased surface CdTe composition in n-Hg1 − x Cd x Te-based MIS structures (x = 0.21–0.23) strongly affect the dependences of capacity and photo-emf on the voltage bias and frequency. Parameters of n-Hg0.7Cd0.3Te-based MIS structures with periodic barrier-type regions of increased CdTe composition are studied, and their effect is shown on the parameters of MIS structures when they are located near the dielectric-semiconductor interface. Electrical properties of n-Hg1 − x Cd x Te-based MIS structures (x = 0.62–0.73) with potential-well regions of decreased CdTe composition in the surface region are studied. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Electrophysical and photoelectrical properties of MIS structures based on MBE grown heteroepitaxial HgCdTe MIS structures with inhomogeneous composition distribution

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Publisher
Pleiades Publishing
Copyright
Copyright © 2014 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739714080149
Publisher site
See Article on Publisher Site

Abstract

The electrophysical and photoelectrical properties of MIS structures are studied using MBE grown heteroepitaxial HgCdTe with inhomogeneous composition distribution. It is shown that surface varib- and layers with increased surface CdTe composition in n-Hg1 − x Cd x Te-based MIS structures (x = 0.21–0.23) strongly affect the dependences of capacity and photo-emf on the voltage bias and frequency. Parameters of n-Hg0.7Cd0.3Te-based MIS structures with periodic barrier-type regions of increased CdTe composition are studied, and their effect is shown on the parameters of MIS structures when they are located near the dielectric-semiconductor interface. Electrical properties of n-Hg1 − x Cd x Te-based MIS structures (x = 0.62–0.73) with potential-well regions of decreased CdTe composition in the surface region are studied.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 26, 2014

References

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