Get 20M+ Full-Text Papers For Less Than $1.50/day. Start a 14-Day Trial for You or Your Team.

Learn More →

Electron transport in thin-base transistor structures exposed to high-energy photons

Electron transport in thin-base transistor structures exposed to high-energy photons Monte Carlo simulations are run to investigate the electron transport in thin-base BJT structures exposed to high-energy photons. The radiation-induced distortion of the electron energy distribution function is shown to be capable of changing, in either direction, the rate of impact ionization in the collector depletion layer to a great extent. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Electron transport in thin-base transistor structures exposed to high-energy photons

Russian Microelectronics , Volume 41 (4) – Jul 12, 2012

Loading next page...
 
/lp/springer_journal/electron-transport-in-thin-base-transistor-structures-exposed-to-high-kCKnspY6pp

References (24)

Publisher
Springer Journals
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
DOI
10.1134/S1063739712040105
Publisher site
See Article on Publisher Site

Abstract

Monte Carlo simulations are run to investigate the electron transport in thin-base BJT structures exposed to high-energy photons. The radiation-induced distortion of the electron energy distribution function is shown to be capable of changing, in either direction, the rate of impact ionization in the collector depletion layer to a great extent.

Journal

Russian MicroelectronicsSpringer Journals

Published: Jul 12, 2012

There are no references for this article.