Electroluminescence mechanisms in SiO x N y (Si) nanocomposite films

Electroluminescence mechanisms in SiO x N y (Si) nanocomposite films With a view to creating the Si LED, the mechanisms of electroluminescence (EL) in SiOxNy(Si) nanocomposite films with Si nanocrystals embedded in the SiOxNy matrix are studied experimentally and theoretically. The most important results are obtained from a Au/SiOxNySi)/p-Si structure having a semitransparent electrode, the oxynitride film containing Si nanocrystals with a mean size of 3–5 nm and a concentration of ∼1018 cm−3; the measurements are made on a reverse-biased structure (substrate potential negative). Room-temperature EL is observed in the visible and IR ranges; the respective peaks are located at wavelengths of 600–700 and about 1200 nm. The study examines current-voltage characteristics of the structure and the dependence of integrated EL intensity on current, voltage, film thickness, the type of substrate conductivity, etc. The following conclusions are drawn from the experimental and theoretical results: The IR branch is mainly associated with carrier heating, avalanche ionization, and formation of light-emitting microplasmas near the substrate-film interface. The visible branch is linked to (i) hot-electron injection from the substrate into the film and (ii) impact excitation of luminescent centers at nanocrystal-matrix interfaces. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Electroluminescence mechanisms in SiO x N y (Si) nanocomposite films

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Publisher
Springer Journals
Copyright
Copyright © 2006 by Pleiades Publishing, Inc.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S106373970602003X
Publisher site
See Article on Publisher Site

Abstract

With a view to creating the Si LED, the mechanisms of electroluminescence (EL) in SiOxNy(Si) nanocomposite films with Si nanocrystals embedded in the SiOxNy matrix are studied experimentally and theoretically. The most important results are obtained from a Au/SiOxNySi)/p-Si structure having a semitransparent electrode, the oxynitride film containing Si nanocrystals with a mean size of 3–5 nm and a concentration of ∼1018 cm−3; the measurements are made on a reverse-biased structure (substrate potential negative). Room-temperature EL is observed in the visible and IR ranges; the respective peaks are located at wavelengths of 600–700 and about 1200 nm. The study examines current-voltage characteristics of the structure and the dependence of integrated EL intensity on current, voltage, film thickness, the type of substrate conductivity, etc. The following conclusions are drawn from the experimental and theoretical results: The IR branch is mainly associated with carrier heating, avalanche ionization, and formation of light-emitting microplasmas near the substrate-film interface. The visible branch is linked to (i) hot-electron injection from the substrate into the film and (ii) impact excitation of luminescent centers at nanocrystal-matrix interfaces.

Journal

Russian MicroelectronicsSpringer Journals

Published: Mar 21, 2006

References

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