Electroforming of Si/SiO2 /W Structures with an Exposed Nanometer-Thick SiO2Layer

Electroforming of Si/SiO2 /W Structures with an Exposed Nanometer-Thick SiO2Layer An experiment is presented concerning the electroforming of exposed-insulator Si/SiO2/W structures, i.e., the current-induced formation of a carbonaceous conducting medium on the exposed area of the insulator and the self-organization of a nanometer-sized nonconducting gap in the medium. It is shown that the electroforming of Si/SiO2/W structures greatly differs from that of Al/Al2O3/W structures. This difference is mainly due to the high level of the spreading resistance of the Si electrode and the high initial conductivity on the exposed area. The current–voltage characteristics of the electroformed structures are examined. It is argued that the structures could serve as a basis for memory arrays with a high density of data. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Electroforming of Si/SiO2 /W Structures with an Exposed Nanometer-Thick SiO2Layer

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Kluwer Academic Publishers-Plenum Publishers
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Engineering; Electrical Engineering
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