An experiment is presented concerning the electroforming of exposed-insulator Si/SiO2/W structures, i.e., the current-induced formation of a carbonaceous conducting medium on the exposed area of the insulator and the self-organization of a nanometer-sized nonconducting gap in the medium. It is shown that the electroforming of Si/SiO2/W structures greatly differs from that of Al/Al2O3/W structures. This difference is mainly due to the high level of the spreading resistance of the Si electrode and the high initial conductivity on the exposed area. The current–voltage characteristics of the electroformed structures are examined. It is argued that the structures could serve as a basis for memory arrays with a high density of data.
Russian Microelectronics – Springer Journals
Published: Oct 10, 2004
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