Electroforming of Si/SiO2 /W Structures with an Exposed Nanometer-Thick SiO2Layer

Electroforming of Si/SiO2 /W Structures with an Exposed Nanometer-Thick SiO2Layer An experiment is presented concerning the electroforming of exposed-insulator Si/SiO2/W structures, i.e., the current-induced formation of a carbonaceous conducting medium on the exposed area of the insulator and the self-organization of a nanometer-sized nonconducting gap in the medium. It is shown that the electroforming of Si/SiO2/W structures greatly differs from that of Al/Al2O3/W structures. This difference is mainly due to the high level of the spreading resistance of the Si electrode and the high initial conductivity on the exposed area. The current–voltage characteristics of the electroformed structures are examined. It is argued that the structures could serve as a basis for memory arrays with a high density of data. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Electroforming of Si/SiO2 /W Structures with an Exposed Nanometer-Thick SiO2Layer

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2001 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1011988628069
Publisher site
See Article on Publisher Site

Abstract

An experiment is presented concerning the electroforming of exposed-insulator Si/SiO2/W structures, i.e., the current-induced formation of a carbonaceous conducting medium on the exposed area of the insulator and the self-organization of a nanometer-sized nonconducting gap in the medium. It is shown that the electroforming of Si/SiO2/W structures greatly differs from that of Al/Al2O3/W structures. This difference is mainly due to the high level of the spreading resistance of the Si electrode and the high initial conductivity on the exposed area. The current–voltage characteristics of the electroformed structures are examined. It is argued that the structures could serve as a basis for memory arrays with a high density of data.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 10, 2004

References

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