Electrochemical high-energy deposition of CdSe nanostructures: modelling, synthesis and characterization

Electrochemical high-energy deposition of CdSe nanostructures: modelling, synthesis and... electrodeposited on Ti substrate from aqueous acidic solution under high-energy conditions produced by pulse potential technique employing -300 V deposition poten- tial and 50 ls pulse width. The transport processes in non- steady state have been studied by mathematical modelling on the basis of the diffusion equation. The calculations have confirmed that the high-voltage pulse electrodeposi- tion operates very high energy localized close to the electrode surface, and the limit of the CdSe formation zone was calculated to be 1 lm from the cathode surface. It has been demonstrated that the solution composition affects the deposit morphology through its effect on the local current density in the near-electrode layer. X-ray diffraction anal- ysis showed as-deposited CdSe had zinc blende crystalline structure that changed to hexagonal after annealing. Local elemental analysis confirmed stoichiometric composition Keywords High-potential pulse deposition  High-energy of as-deposited and annealed deposits. The optical band electrochemistry  Non-steady state diffusion  Modelling gap was found to be 1.64 eV from the absorbance spectra. Codeposition  CdSe nanostructures 1 Introduction Cadmium selenide as II–VI semiconductor attracts much attention due to its photoelectrochemical and photovoltaic properties and its potential application in solar cells and optoelectronic devices [1–4]. There are http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Journal of Applied Electrochemistry Springer Journals

Electrochemical high-energy deposition of CdSe nanostructures: modelling, synthesis and characterization

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Publisher
Springer Netherlands
Copyright
Copyright © 2017 by Springer Science+Business Media B.V.
Subject
Chemistry; Electrochemistry; Physical Chemistry; Industrial Chemistry/Chemical Engineering
ISSN
0021-891X
eISSN
1572-8838
D.O.I.
10.1007/s10800-017-1106-x
Publisher site
See Article on Publisher Site

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