Electroactive Centers at the Outer Interface of an Ultrathin Oxide Layer and Their Effect on the Electrical Performance of Single-Crystal Silicon/Noncrystalline Oxide/Polysilicon Structures

Electroactive Centers at the Outer Interface of an Ultrathin Oxide Layer and Their Effect on the... Single-crystal silicon/noncrystalline ultrathin oxide multilayer structures were investigated. The oxide was formed by (100)Si thermal oxidation. An undoped polysilicon layer with an aluminum contact was used as a gate. The distribution of ionized electroactive centers (defects) in the ultrathin oxide and the energy spectrum of the centers at the oxide interfaces and near the polysilicon surface were considered. It was found that the centers at the outer interface of the oxide affect the electrical performance of the multilayer structures. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Electroactive Centers at the Outer Interface of an Ultrathin Oxide Layer and Their Effect on the Electrical Performance of Single-Crystal Silicon/Noncrystalline Oxide/Polysilicon Structures

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Publisher
Kluwer Academic Publishers-Plenum Publishers
Copyright
Copyright © 2000 by MAIK “Nauka/Interperiodica”
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1026600405092
Publisher site
See Article on Publisher Site

Abstract

Single-crystal silicon/noncrystalline ultrathin oxide multilayer structures were investigated. The oxide was formed by (100)Si thermal oxidation. An undoped polysilicon layer with an aluminum contact was used as a gate. The distribution of ionized electroactive centers (defects) in the ultrathin oxide and the energy spectrum of the centers at the oxide interfaces and near the polysilicon surface were considered. It was found that the centers at the outer interface of the oxide affect the electrical performance of the multilayer structures.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 8, 2004

References

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