Electrical properties of a TiN/Ti x Al1 – x O y /TiN memristor device manufactured by magnetron sputtering

Electrical properties of a TiN/Ti x Al1 – x O y /TiN memristor device manufactured by magnetron... A memristor device with an active layer of mixed metal oxide has been manufactured using reactive magnetron sputtering and electron lithography. The device’s electrical characteristics, such as the switching voltage and resistances in the low-resistance (LRS) and high-resistance (HRS) states, are stable and they a high resistance ratio in these states. The electrical properties of the device, which are similar to those of a living synapse by neural pulse propagation, have been determined. The possibility of the memristor application as a summing element of an artificial neuron is shown. The large value of the high-to-low resistance ratio and minor variation of the electrical characteristics make it possible to use the device in the neuromorphic computing systems. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Electrical properties of a TiN/Ti x Al1 – x O y /TiN memristor device manufactured by magnetron sputtering

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Publisher
Springer Journals
Copyright
Copyright © 2016 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739716060020
Publisher site
See Article on Publisher Site

Abstract

A memristor device with an active layer of mixed metal oxide has been manufactured using reactive magnetron sputtering and electron lithography. The device’s electrical characteristics, such as the switching voltage and resistances in the low-resistance (LRS) and high-resistance (HRS) states, are stable and they a high resistance ratio in these states. The electrical properties of the device, which are similar to those of a living synapse by neural pulse propagation, have been determined. The possibility of the memristor application as a summing element of an artificial neuron is shown. The large value of the high-to-low resistance ratio and minor variation of the electrical characteristics make it possible to use the device in the neuromorphic computing systems.

Journal

Russian MicroelectronicsSpringer Journals

Published: Feb 9, 2017

References

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