Electrical parameters and concentrations of charged particles in methane plasma

Electrical parameters and concentrations of charged particles in methane plasma The steady-state parameters and the composition of the dc glow discharge plasma (p = 40–200 Pa, i = 30–70 mA) in methane are investigated by the probe diagnostics and mathematical modeling when solving the Boltzmann kinetic equation. The data on the reduced electric field strength, the electron energy distributions, the rate constants of the processes during the electron impact, the concentrations of charged particles, and the densities of their fluxes on the surface, which restrict the plasma region, are obtained. It is established that the associative electron detachment from the negative ion H− + R → H-R + e (where R = H, CH3, CH2, CH ...) substantially affects the balance of the charged particles in the plasma. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Electrical parameters and concentrations of charged particles in methane plasma

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Publisher
Springer US
Copyright
Copyright © 2013 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739713040057
Publisher site
See Article on Publisher Site

Abstract

The steady-state parameters and the composition of the dc glow discharge plasma (p = 40–200 Pa, i = 30–70 mA) in methane are investigated by the probe diagnostics and mathematical modeling when solving the Boltzmann kinetic equation. The data on the reduced electric field strength, the electron energy distributions, the rate constants of the processes during the electron impact, the concentrations of charged particles, and the densities of their fluxes on the surface, which restrict the plasma region, are obtained. It is established that the associative electron detachment from the negative ion H− + R → H-R + e (where R = H, CH3, CH2, CH ...) substantially affects the balance of the charged particles in the plasma.

Journal

Russian MicroelectronicsSpringer Journals

Published: Sep 3, 2013

References

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