Electrical conductivity of titanium dioxide layers doped with vanadium, cobalt, and niobium

Electrical conductivity of titanium dioxide layers doped with vanadium, cobalt, and niobium Much attention to electrical properties of titanium dioxide is due to the fact that it has recently started to be used in the manufacture of various electronic devices. Temperature dependences of the directcurrent (DC) and alternating-current (AC) conductivities of titanium dioxide layers doped with vanadium, as well as simultaneously with cobalt and niobium, are studied. The layers were produced by the high-frequency magnetron deposition in an oxygen/argon environment at a temperature of 550°C, vacuum of 2 × 10−2 Torr, and a 0.07-nm/s deposition rate. Below room temperature, the electrical conductivity of vanadium-doped titanium dioxide is specified by a variable range-hopping conduction. The localized state density is estimated at the Fermi level. A tunneling conductance with thermal activation of carriers between clusters, presumably cobalt clusters, is detected for samples doped with cobalt and niobium. It is shown that the measurement of the dependence of the electrical resistance on the temperature is a fast and reliable method for determining the presence of clusters in a material. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Electrical conductivity of titanium dioxide layers doped with vanadium, cobalt, and niobium

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Publisher
SP MAIK Nauka/Interperiodica
Copyright
Copyright © 2012 by Pleiades Publishing, Ltd.
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1134/S1063739712080045
Publisher site
See Article on Publisher Site

Abstract

Much attention to electrical properties of titanium dioxide is due to the fact that it has recently started to be used in the manufacture of various electronic devices. Temperature dependences of the directcurrent (DC) and alternating-current (AC) conductivities of titanium dioxide layers doped with vanadium, as well as simultaneously with cobalt and niobium, are studied. The layers were produced by the high-frequency magnetron deposition in an oxygen/argon environment at a temperature of 550°C, vacuum of 2 × 10−2 Torr, and a 0.07-nm/s deposition rate. Below room temperature, the electrical conductivity of vanadium-doped titanium dioxide is specified by a variable range-hopping conduction. The localized state density is estimated at the Fermi level. A tunneling conductance with thermal activation of carriers between clusters, presumably cobalt clusters, is detected for samples doped with cobalt and niobium. It is shown that the measurement of the dependence of the electrical resistance on the temperature is a fast and reliable method for determining the presence of clusters in a material.

Journal

Russian MicroelectronicsSpringer Journals

Published: Nov 17, 2012

References

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