Modulation-and delta-doped AlxGa1 − x As/InyGa1 − y As/GaAs PHEMT structures are grown by MBE. The effect is examined of changes in the technique and level of doping on the electrical behavior of the structures. Photoluminescence spectroscopy combined with Hall-effect measurements is shown to be an effective strategy for the purpose. The experimental results are interpreted on the basis of calculated conductionband diagrams.
Russian Microelectronics – Springer Journals
Published: Mar 21, 2006
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