The heterostructures of p-(SiC)1 − x (AlN) x / n -6H-SiC are synthesized by means of sublimation epitaxy of (SiC)1 − x (AlN) semiconductor solid solutions at 6H-SiC substrates. The results of the investigation of the concentration and temperature dependences on current-voltage characteristics (CVCs) are presented. It is revealed that due to the high potential barriers the forward current is caused by the tunneling and recombination processes of charge carriers via states at the boundary surface.
Russian Microelectronics – Springer Journals
Published: Dec 9, 2011
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