Electric and photoelectric properties of n-AgInSe2/p-Si heterojunction diode fabricated by successive layer deposition

Electric and photoelectric properties of n-AgInSe2/p-Si heterojunction diode fabricated by... Thin films of AgInSe2 ternary compound were grown by a successive process in which the production of AIS-Ag–AIS-Ag–AIS-Ag layers was deposited by e-beam and thermal evaporation on p-type silicon substrates. The formation of a stoichiometric AgInSe2 thin film with 75.2% crystallinity was achieved and the film had homogenous and smooth surfaces. n-AgInSe2/p-Si structure has exhibited good rectifying behavior with rectification ratio of 3.99 × 103. The ideality factor and saturation current were found to be 1.74 and 2.71 × 10−7 A, respectively. The n-AgInSe2/p-Si heterojunction diode exhibited non-ideal reverse-bias capacitance–voltage (C −2–V) characteristic due to fully depletion of n-AgInSe2 side. The basic photovoltaic parameters of the diode such as open-circuit voltage (V oc), short-circuit current (I sc), and fill factor (FF) were obtained as 0.49 V, 4.03 mA, and 27.65%, respectively. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Applied Physics A: Materials Science Processing Springer Journals

Electric and photoelectric properties of n-AgInSe2/p-Si heterojunction diode fabricated by successive layer deposition

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Publisher
Springer Journals
Copyright
Copyright © 2017 by Springer-Verlag GmbH Germany
Subject
Physics; Condensed Matter Physics; Optical and Electronic Materials; Nanotechnology; Characterization and Evaluation of Materials; Surfaces and Interfaces, Thin Films; Operating Procedures, Materials Treatment
ISSN
0947-8396
eISSN
1432-0630
D.O.I.
10.1007/s00339-017-1205-x
Publisher site
See Article on Publisher Site

Abstract

Thin films of AgInSe2 ternary compound were grown by a successive process in which the production of AIS-Ag–AIS-Ag–AIS-Ag layers was deposited by e-beam and thermal evaporation on p-type silicon substrates. The formation of a stoichiometric AgInSe2 thin film with 75.2% crystallinity was achieved and the film had homogenous and smooth surfaces. n-AgInSe2/p-Si structure has exhibited good rectifying behavior with rectification ratio of 3.99 × 103. The ideality factor and saturation current were found to be 1.74 and 2.71 × 10−7 A, respectively. The n-AgInSe2/p-Si heterojunction diode exhibited non-ideal reverse-bias capacitance–voltage (C −2–V) characteristic due to fully depletion of n-AgInSe2 side. The basic photovoltaic parameters of the diode such as open-circuit voltage (V oc), short-circuit current (I sc), and fill factor (FF) were obtained as 0.49 V, 4.03 mA, and 27.65%, respectively.

Journal

Applied Physics A: Materials Science ProcessingSpringer Journals

Published: Aug 22, 2017

References

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