Elastically Strained Porous Silicon Layers Formed on Single-Crystal Substrates

Elastically Strained Porous Silicon Layers Formed on Single-Crystal Substrates Elastically strained porous silicon layers on single-crystal substrates are fabricated and examined. It is established that (i) the strain-related properties of the layers can be varied by adjusting the process conditions and (ii) the layers could be useful for the low-temperature gettering of impurities and defects from silicon single crystals. http://www.deepdyve.com/assets/images/DeepDyve-Logo-lg.png Russian Microelectronics Springer Journals

Elastically Strained Porous Silicon Layers Formed on Single-Crystal Substrates

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Publisher
Springer Journals
Copyright
Copyright © 2003 by MAIK Nauka/Interperiodica
Subject
Engineering; Electrical Engineering
ISSN
1063-7397
eISSN
1608-3415
D.O.I.
10.1023/A:1027354329722
Publisher site
See Article on Publisher Site

Abstract

Elastically strained porous silicon layers on single-crystal substrates are fabricated and examined. It is established that (i) the strain-related properties of the layers can be varied by adjusting the process conditions and (ii) the layers could be useful for the low-temperature gettering of impurities and defects from silicon single crystals.

Journal

Russian MicroelectronicsSpringer Journals

Published: Oct 11, 2004

References

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